PART |
Description |
Maker |
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
7MBP10PE120 7MBR10PE120 |
IGBT module (S series) IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|
C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
CPV363M4KPBF |
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
|
Vishay Siliconix
|
DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd.
|
CPV364MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
CPV363M4K |
IGBT IGBT SIP MODULE Short Circuit Rated UltraFast
|
IRF[International Rectifier]
|
APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
|